SPIE Advanced Lithography 2011
27 February – 3 March 2011
nanoUV will participate to the SPIE Advanced Lithography event to showcase their latest development of multiplexed EUV light sources.
SPIE Advanced Lithography 2010
nanoUV was a contributor at the SPIE Advanced Lithography SAN JOSE 2010 conference and exhibition, 21 - 25 February 2010, thas was held at the San Jose Convention Center.
nanoUV introduced its ultra bright sources for EUV Metrology:
- HYDRA-4ABITM source for actinic Mask Blank Inspection
- HYDRA-12AIMSTM a source for actinic Aerial Inspection.
nanoUV welcomed visitors at the Exhibition Center on booth 515 and presented 4 papers at the conference :
- High-brightness NGL multiplexed EUV light source for EUV metrology and defect inspection
Paper 7636-128 of Conference 7636
- High-brightness EUV light source performance for EUV interferometer and microscopy
Paper 7638-121 of Conference 7638
- High-brightness EUV light source unit for EUV interferometer and metrology
Paper 7636-122 of Conference 7636
- High-brightness EUV light source modeling
Paper 7636-121 of Conference 7636
The papers were presented at the poster sessions on February 23rd. and February 24th.
@ SAN JOSE, USA > Link
SPIE Taiwan 2009
November 18-19 2009, NanoUV presented both a modelling study and the experimental results of the i-SoCoMo concept, an impulse discharge plasma source with an integrated photon collector based on an active plasma structure. The small physical size and low etendue properties of the “i-SoCoMo” unit allows for a large number of such sources to be combined in to one physical package and to be operated in a multiplexed fashion, to meet the necessary power requirements for HVM source solutions.
@ Taipe, Taiwan
2009 International Symposium on Extreme Ultraviolet Lithography
nanoUV presented to the 2009 International Symposium on Extreme Ultraviolet Lithography, held in Prague October 18-21, the latest results obtained for their high brightness next generation multiplexed EUV light sources. The sources have been developed for industrial applications in the fields EUV interferometer, Metrology, and Inspection.
nanoUV is instrumental in helping industry by providing source solutions for the challenging HVM requirements of Metrology, Inspection and EUV Lithography.
@ Prague, Czech Republic
EUV Source Workshop
nanoUV attented the Sematech Knowledge Series "EUV Source Workshop" organised by Sematech, in Baltimore on May 29-30.
Our President and Director of Technology, Dr Peter Choi presented a paper on "High Brightness next Generation EUV Lithograph Light Source for Metrology" as to fulfill market needs.
@ Baltimore, USA
SPIE San Jose 2009
nanoUV attended the SPIE Advanced Lithography SAN JOSE 2009, on the 22 - 27 February 2009, at the San Jose Convention Center.
nanoUV introduced (FEB-09) to the market an exceptionally bright EUV light source dedicated for MASK Inspection, the HYDRA 12TM BE18, with an irradiance of 1018 photon/cm2/s in the EUV band, at the intermediate focus (IF)( Brighter than a synchrotron). This source encountered an important interest from the industry as it is the first multiplexed source available as a product to the industry, showing nanoUV Know How and a step ahead the competition between the source manufacturers.
nanoUV presented a paper on "High-performance next-generation EUV lithography light source".
Show Abstract, paper 7271-106.
nanoUV has welcome visitors at the Exhibition Center on booth 117, and offered to the first 500 showing up a "green product" a nice USB KEY in wood has been offered to everyone showing up visiting nanoUV booth.
@ San Jose, USA
SEMICON JAPAN 2008
nanoUV attended the SEMICON JAPAN 2008, December 3 to 5, at the Makuhari Messe, Chiba, Japan.
Peter Choi, President and Director of Technology has given an oral presentation in the "exhibitor seminar area", on Wednesday the 3rd of Dec, Hall 4, Room 2, from 10:30 to 11:20: " nano-UV delivers the next gen EUV light sources with exceptional brightness for metrology", nanoUV has been invited to participate to this event by JETRO the "Japan External Trade Organisation". nanoUV delegates met a significant number of Japanese industrials very interested in nanoUV technologies and future development.
@ Chiba, Japan > Link
EUVL symposium in Lake Tahoe
The 2008 EUVL Symposium is a key industry forum for industry experts and researchers to discuss and assess the continuing progress and maturity of extreme ultraviolet lithography (EUVL) technology and the infrastructure needed to support its insertion into production.
nanoUV was proud to sponsor this important meeting and has introduced the new CYCLOPSTM BE16 EUV source product in a paper at the Symposium titled "Next Generation EUV Lithography Light Source".
@ Lake Tahoe, California
nanoUV team attended the SEMICON West tradeshow in San Francisco, this event attracts the world’s leading innovation companies who are responsible for the technologies that enable the microelectronics that drive today’s most sophisticated consumer and commercial electronic products.
@ San Francisco, USA
In 2008, the power of a fully integrated EUV source is projected to increase from 4W to approximately 100W at Intermediate Focus. To reach this target by the end of 2008 requires that the source power double approximately every two months. This SEMATECH workshop -which brings together source suppliers, exposure tool suppliers, academia/researchers, and other experts focused on aggressively pursuing the lithography technology roadmap- will update attendees on the recent progress being made in source performance and provide a critical review of the challenges restricting the enhancement of this technology.
@ Bolton Landing (Lake George), NY > Link