http://www.nanouv.com/ Pierre Pesty EN Wed, 02 Mar 2011 13:02:30 +0100 http://www.nanouv.com/index.php Tue, 04 Jan 2011 12:20:59 +0100 http://www.nanouv.com/news.php Tue, 04 Jan 2011 12:20:59 +0100 http://www.nanouv.com/publi.php Fri, 15 Feb 2008 17:46:40 +0100 http://www.nanouv.com/glossary.php Fri, 15 Feb 2008 17:46:40 +0100 http://www.nanouv.com/careers.php http://www.nanouv.com/contact.php Fri, 02 Jul 2010 11:53:56 +0100 http://www.nanouv.com/video_teaser.php Wed, 20 Jan 2010 19:05:30 +0100 http://www.nanouv.com/news.php Tue, 04 Jan 2011 12:20:59 +0100 Events, news, etc. http://www.nanouv.com/publi.php Fri, 15 Feb 2008 17:46:40 +0100 Press release and advertisment http://www.nanouv.com/glossary.php Fri, 15 Feb 2008 17:46:40 +0100 Some explanations about Nano-UV world http://www.nanouv.com/company_lang_EN_menu_2 Dr. Peter Choi, Dr Carmen Dumitrescu, M. Yves CHEMLA http://www.nanouv.com/cyclops-be16_lang_EN_menu_5 Cyclops(tm) BE 16 specifications http://www.nanouv.com/cyclops-xe15.php_lang_EN_menu_5 http://www.nanouv.com/euv-metrology-sources_lang_EN_menu_1 Nano-UV announced the launch of its three new EUV sources to its HYDRATM product range http://www.nanouv.com/hydra-abi.php_lang_EN_menu_5 http://www.nanouv.com/hydra-aims.php_lang_EN_menu_5 http://www.nanouv.com/hydra-apmi.php_lang_EN_menu_5 http://www.nanouv.com/technology_lang_EN_menu_1 EUV technology has focused on Laser Produced Plasma or Discharge Produced Plasma radiation sources http://www.nanouv.com/SPIE-Advanced-Lithography-2011_news_26.php Tue, 04 Jan 2011 12:20:59 +0100 27 February – 3 March 2011 nanoUV will participate to the SPIE Advanced Lithography event to showcase their latest development of multiplexed EUV light sources. http://www.nanouv.com/SPIE-Advanced-Lithography-2010_news_25.php Thu, 25 Mar 2010 20:10:26 +0100 nanoUV was a contributor at the SPIE Advanced Lithography SAN JOSE 2010 conference and exhibition, 21 - 25 February 2010, thas was held at the San Jose Convention Center. nanoUV introduced... http://www.nanouv.com/SPIE-Taiwan-2009_news_10.php Wed, 06 May 2009 10:26:49 +0100 November 18-19 2009, NanoUV presented both a modelling study and the experimental results of the i-SoCoMo concept, an impulse discharge plasma source with an integrated photon collector... http://www.nanouv.com/2009-International-Symposium-on-Extreme-Ultraviolet-Lithography_news_9.php Wed, 06 May 2009 10:26:49 +0100 nanoUV presented to the 2009 International Symposium on Extreme Ultraviolet Lithography, held in Prague October 18-21, the latest results obtained for their high brightness next generation... http://www.nanouv.com/EUV-Source-Workshop_news_8.php Wed, 06 May 2009 10:26:49 +0100 nanoUV attented the Sematech Knowledge Series "EUV Source Workshop" organised by Sematech, in Baltimore on May 29-30. Our President and Director of Technology, Dr Peter Choi presented a... http://www.nanouv.com/SPIE-San-Jose-2009_news_7.php Fri, 23 Jan 2009 18:09:01 +0100 nanoUV attended the SPIE Advanced Lithography SAN JOSE 2009, on the 22 - 27 February 2009, at the San Jose Convention Center. nanoUV introduced (FEB-09) to the market an... http://www.nanouv.com/SEMICON-JAPAN-2008_news_6.php Wed, 26 Nov 2008 11:37:14 +0100 nanoUV attended the SEMICON JAPAN 2008, December 3 to 5, at the Makuhari Messe, Chiba, Japan. Peter Choi, President... http://www.nanouv.com/EUVL-symposium-in-Lake-Tahoe_news_5.php Tue, 26 Aug 2008 16:59:58 +0100 The 2008 EUVL Symposium is a key industry forum for industry experts and researchers to discuss and assess the continuing progress and maturity of extreme ultraviolet lithography (EUVL) technology... http://www.nanouv.com/SEMICON-West_news_4.php Tue, 08 Jul 2008 16:47:52 +0100 nanoUV team attended the SEMICON West tradeshow in San Francisco, this event attracts the world’s leading innovation companies who are responsible for the technologies that enable the... http://www.nanouv.com/SEMATECH-Workshop_news_3.php Tue, 13 May 2008 10:26:48 +0100 In 2008, the power of a fully integrated EUV source is projected to increase from 4W to approximately 100W at Intermediate Focus. To reach this target by the end of 2008 requires that the source... http://www.nanouv.com/SPIE_news_2.php Fri, 15 Feb 2008 17:46:40 +0100 California, USA. February 26-27th, 2008, nanoUV attented the SPIE Advanced Lithography Conference at San Jose (CA) 2008. nanoUV introduced to the market the fist nanoUV product a table top EUV... http://www.nanouv.com/Press-release_publi_1.php Fri, 15 Feb 2008 17:46:40 +0100 Paris, January 17th, 2008, NANO-UV announces an €8.7M investment from the http://www.nanouv.com/DPP_glossary_11.php Fri, 15 Feb 2008 17:46:40 +0100 (Discharge Produced Plasma) In DPP, electrical energy is used to ionize a gas (or mixture of gases), heating it to produce a high density plasma. Depending on the gas(es) used, their partial... http://www.nanouv.com/EUVL_glossary_12.php Fri, 15 Feb 2008 17:46:40 +0100 (Extreme Ultra Violet lithography) Also known as EUV lithography is a next-generation lithography using the 13.5 nm wavelength. EUV is a significant departure from the deep... http://www.nanouv.com/HVM_glossary_13.php Fri, 15 Feb 2008 17:46:40 +0100 (High Volume Manufacturing) This acronym is used often in the semiconductor manufacturing sector to identify a production system or process that performs to set industrial requirements. The... http://www.nanouv.com/LPP_glossary_14.php Fri, 15 Feb 2008 17:46:40 +0100 (Laser Produced Plasma) Relates to plasma produced by laser irradiation of a substance. Generally created by directing a laser at a target composed of a liquid, a solid, or a partially condensed... http://www.nanouv.com/Microchips_glossary_15.php Fri, 15 Feb 2008 17:46:40 +0100 Microchips are generally the basic components of modern miniaturized electronics. The chip is a series of electrical circuits built into a tiny wafer of silicon or another semiconductor. These... http://www.nanouv.com/Photolithography_glossary_16.php Fri, 15 Feb 2008 17:46:40 +0100 In the photolithography process, elements to be created on the IC are reproduced in a pattern of transparent and opaque... http://www.nanouv.com/Plasma_glossary_17.php Fri, 15 Feb 2008 17:46:40 +0100 A plasma is one of the four states of matter. It is similar to a gas, but consists of positively charged ions with most or all of their detached electrons moving freely. Plasmas are produced by... http://www.nanouv.com/Resist_glossary_18.php Fri, 15 Feb 2008 17:46:40 +0100 Resists are generally proprietary mixtures of a polymer or its precursor and other small molecules (e.g. photoacid generators)... http://www.nanouv.com/Scanner_glossary_19.php Fri, 15 Feb 2008 17:46:40 +0100 (Stepper) The detailed patterns in semiconductor device fabrication are transferred using a type of stepper called a scanner, which moves the wafer and photomask with respect to each other during... http://www.nanouv.com/Wafer_glossary_20.php Fri, 15 Feb 2008 17:46:40 +0100 A wafer is a thin circular slice of a material such as pure silicon that has been doped to produce a semiconducting material on which an integrated circuit can be formed. http://www.nanouv.com/Actinic_glossary_21.php Fri, 15 Feb 2008 17:46:40 +0100 The word is derived from the Greek Actinism meaning radiant force. Its use is in the context of the technological application of radiation, as in the modification of material properties, such as... http://www.nanouv.com/ABI_glossary_22.php Fri, 15 Feb 2008 17:46:40 +0100 Aerial Blank Inspection (ABI): This is the process by which mask blanks for the photolithographic process of producing silicon wafers are inspected. The push towards features sizes that have to be... http://www.nanouv.com/APMI_glossary_23.php Fri, 15 Feb 2008 17:46:40 +0100 Aerial Pattern Mask Inspection (APMI): Once a blank mask has been inspected and accepted it has to be patterned with the required details for the particular lithographic stage it is required for.... http://www.nanouv.com/AIMS_glossary_24.php Fri, 15 Feb 2008 17:46:40 +0100 Aerial Image Measurement System (AIMS): This is an optical technique developed to evaluate the printability of features in a lithographic system. It is required to monitor the quality of the masks...