SPIE Advanced Lithography 2010

Edited: 2010/03/25

nanoUV was a contributor at the SPIE Advanced Lithography SAN JOSE 2010 conference and exhibition, 21 - 25 February 2010, thas was held at the San Jose Convention Center.

nanoUV introduced its ultra bright sources for EUV Metrology:

• HYDRA^-4ABI^TM source for actinic Mask Blank Inspection
• HYDRA^-12AIMS^TM a source for actinic Aerial Inspection.

nanoUV welcomed visitors at the Exhibition Center on booth 515 and presented 4 papers at the conference :

1. High-brightness NGL multiplexed EUV light source for EUV metrology and defect inspection
   Paper 7636-128 of Conference 7636
2. High-brightness EUV light source performance for EUV interferometer and microscopy
   Paper 7638-121 of Conference 7638
3. High-brightness EUV light source unit for EUV interferometer and metrology
   Paper 7636-122 of Conference 7636
4. High-brightness EUV light source modeling
   Paper 7636-121 of Conference 7636

The papers were presented at the poster sessions on February 23^rd. and February 24^th.

@ SAN JOSE, USA  > Link